Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics

Q. Lu*, R. Lin, P. Ranade, Y. C. Yeo, X. Meng, H. Takeuchi, T. J. King, Chen-Ming Hu, H. Luan, S. Lee, W. Bai, C. H. Lee, D. L. Kwong, X. Guo, X. Wang, T. P. Ma

*Corresponding author for this work

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Material Science