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Molybdenum gate electrode technology for deep sub-micron CMOS generations
Pushkar Ranade
*
, Ronald Lin
, Qiang Lu
, Yee Chia Yeo
, Hideki Takeuchi
, Tsu Jae King
,
Chen-Ming Hu
*
Corresponding author for this work
International College of Semiconductor Technology
Research output
:
Contribution to journal
›
Conference article
›
peer-review
10
Scopus citations
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Keyphrases
CMOS Gate
25%
CMOS Technology
50%
Deep Submicron Technology
100%
Dielectric
25%
Dielectric Interface
25%
Dielectric Permittivity
25%
Electrode Technology
100%
Fundamental Change
25%
Gate Electrode
100%
Gate Stack
25%
Gate Work Function
50%
Metal Gate Electrode
25%
Metal Work Function
25%
Mo Film
25%
Molybdenum
100%
MOSFET
25%
Nitrogen Ions
25%
Permittivity
25%
Refractory Metals
25%
Stacked Material
25%
Technology Node
25%
Transistor
50%
Work Function
50%
Material Science
Dielectric Material
100%
Film
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Molybdenum
100%
Permittivity
100%
Refractory Metal
50%
Transistor
100%
Engineering
Dielectrics
75%
Gate Electrode
100%
Gate Stack
25%
Implant
25%
Metal Gate Electrode
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Nodes
25%
Potential Application
25%
Chemical Engineering
Film
100%
Refractory Metal
100%