Skip to main navigation
Skip to search
Skip to main content
National Yang Ming Chiao Tung University Academic Hub Home
English
中文
Search content at National Yang Ming Chiao Tung University Academic Hub
Home
Profiles
Research units
Research output
Projects
Prizes
Activities
Equipment
Impacts
Molybdenum gate electrode technology for deep sub-micron CMOS generations
Pushkar Ranade
*
, Ronald Lin
, Qiang Lu
, Yee Chia Yeo
, Hideki Takeuchi
, Tsu Jae King
,
Chen-Ming Hu
*
Corresponding author for this work
International College of Semiconductor Technology
Research output
:
Contribution to journal
›
Conference article
›
peer-review
10
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Molybdenum gate electrode technology for deep sub-micron CMOS generations'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Gate Electrode
100%
Deep Submicron Technology
100%
Molybdenum
100%
Electrode Technology
100%
CMOS Technology
50%
Work Function
50%
Transistor
50%
Gate Work Function
50%
Technology Node
25%
Dielectric
25%
Dielectric Permittivity
25%
MOSFET
25%
Metal Work Function
25%
Permittivity
25%
Gate Stack
25%
CMOS Gate
25%
Refractory Metals
25%
Dielectric Interface
25%
Stacked Material
25%
Fundamental Change
25%
Nitrogen Ions
25%
Metal Gate Electrode
25%
Mo Film
25%
Material Science
Transistor
100%
Permittivity
100%
Molybdenum
100%
Dielectric Material
100%
Film
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Refractory Metal
50%
Engineering
Gate Electrode
100%
Dielectrics
75%
Nodes
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Implant
25%
Gate Stack
25%
Potential Application
25%
Metal Gate Electrode
25%
Chemical Engineering
Refractory Metal
100%
Film
100%