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Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodes
Jenn-Fang Chen
*
, A. Y. Cho
*
Corresponding author for this work
Department of Electrophysics
National Yang Ming Chiao Tung University
Research output
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Contribution to journal
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Article
›
peer-review
5
Scopus citations
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Keyphrases
Molecular Beam Epitaxy
100%
GaSb
100%
Band-to-band Tunneling
100%
Tunnel Diode
100%
AlSb
100%
Gallium Arsenide
40%
Full Width at Half Maximum
40%
Diffraction
40%
Polytype
40%
GaAs Substrate
40%
GaSb Epilayer
40%
Surface Morphology
20%
Epilayer
20%
Tunneling
20%
Buffer Layer
20%
Heterojunction
20%
Hall Effect
20%
Heterostructure
20%
Current Peak
20%
Peak Current Density
20%
Peak-to-valley Current Ratio
20%
Resistance Properties
20%
Optimum Growth Conditions
20%
Tunneling Devices
20%
Negative Differential Resistance
20%
Material Science
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Epilayers
75%
Heterojunction
50%
Density
25%
Surface Morphology
25%
Buffer Layer
25%