Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

J. S. Wang^*, R. S. Hsiao, Kuo-Jui Lin, K. F. Lin, H. Y. Liu, C. M. Lai, L. Wei, C. Y. Liang, J. Y. Chi, A. R. Kovsh, N. A. Maleev, D. A. Livshita, Jenn-Fang Chen, Hsin-Chieh Yu, V. M. Ustinov

^*Corresponding author for this work