Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

J. S. Wang; R. S. Hsiao; Kuo-Jui Lin; K. F. Lin; H. Y. Liu; C. M. Lai; L. Wei; C. Y. Liang; J. Y. Chi; A. R. Kovsh; N. A. Maleev; D. A. Livshita; Jenn-Fang Chen; Hsin-Chieh Yu; V. M. Ustinov

doi:10.1116/1.1807839

Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

J. S. Wang^*, R. S. Hsiao, Kuo-Jui Lin, K. F. Lin, H. Y. Liu, C. M. Lai, L. Wei, C. Y. Liang, J. Y. Chi, A. R. Kovsh, N. A. Maleev, D. A. Livshita, Jenn-Fang Chen, Hsin-Chieh Yu, V. M. Ustinov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm², internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm² at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.

Original language	English
Pages (from-to)	2663-2667
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1807839
State	Published - Nov 2004

Access to Document

10.1116/1.1807839

Cite this

Wang, J. S., Hsiao, R. S., Lin, K.-J., Lin, K. F., Liu, H. Y., Lai, C. M., Wei, L., Liang, C. Y., Chi, J. Y., Kovsh, A. R., Maleev, N. A., Livshita, D. A., Chen, J.-F., Yu, H.-C., & Ustinov, V. M. (2004). Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(6), 2663-2667. https://doi.org/10.1116/1.1807839

@article{febe9c8e24c642cf82a185c166722c73,

title = "Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm",

abstract = "Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm2, internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.",

author = "Wang, {J. S.} and Hsiao, {R. S.} and Kuo-Jui Lin and Lin, {K. F.} and Liu, {H. Y.} and Lai, {C. M.} and L. Wei and Liang, {C. Y.} and Chi, {J. Y.} and Kovsh, {A. R.} and Maleev, {N. A.} and Livshita, {D. A.} and Jenn-Fang Chen and Hsin-Chieh Yu and Ustinov, {V. M.}",

year = "2004",

month = nov,

doi = "10.1116/1.1807839",

language = "English",

volume = "22",

pages = "2663--2667",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

Wang, JS, Hsiao, RS, Lin, K-J, Lin, KF, Liu, HY, Lai, CM, Wei, L, Liang, CY, Chi, JY, Kovsh, AR, Maleev, NA, Livshita, DA, Chen, J-F , Yu, H-C & Ustinov, VM 2004, 'Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 6, pp. 2663-2667. https://doi.org/10.1116/1.1807839

TY - JOUR

T1 - Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

AU - Wang, J. S.

AU - Hsiao, R. S.

AU - Lin, Kuo-Jui

AU - Lin, K. F.

AU - Liu, H. Y.

AU - Lai, C. M.

AU - Wei, L.

AU - Liang, C. Y.

AU - Chi, J. Y.

AU - Kovsh, A. R.

AU - Maleev, N. A.

AU - Livshita, D. A.

AU - Chen, Jenn-Fang

AU - Yu, Hsin-Chieh

AU - Ustinov, V. M.

PY - 2004/11

Y1 - 2004/11

N2 - Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm2, internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.

AB - Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm2, internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.

UR - http://www.scopus.com/inward/record.url?scp=19944430176&partnerID=8YFLogxK

U2 - 10.1116/1.1807839

DO - 10.1116/1.1807839

M3 - Article

AN - SCOPUS:19944430176

SN - 1071-1023

VL - 22

SP - 2663

EP - 2667

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

Abstract

Access to Document

Other files and links

Fingerprint

Cite this