Molecular beam epitaxial GaAs optical detectors on silica fibers

Wei Qi Li; Albert Chin; Pallab Bhattacharya; S. DiVita

doi:10.1063/1.99620

Molecular beam epitaxial GaAs optical detectors on silica fibers

Wei Qi Li^*, Albert Chin, Pallab Bhattacharya, S. DiVita

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.

Original language	English
Pages (from-to)	1768-1770
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	21
DOIs	https://doi.org/10.1063/1.99620
State	Published - 1 Dec 1988

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10.1063/1.99620

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@article{99035e79877a42b688b483e1f774e22f,

title = "Molecular beam epitaxial GaAs optical detectors on silica fibers",

abstract = "By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.",

author = "Li, {Wei Qi} and Albert Chin and Pallab Bhattacharya and S. DiVita",

year = "1988",

month = dec,

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doi = "10.1063/1.99620",

language = "English",

volume = "52",

pages = "1768--1770",

journal = "Applied Physics Letters",

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T1 - Molecular beam epitaxial GaAs optical detectors on silica fibers

AU - Li, Wei Qi

AU - Chin, Albert

AU - Bhattacharya, Pallab

AU - DiVita, S.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.

AB - By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.

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U2 - 10.1063/1.99620

DO - 10.1063/1.99620

M3 - Article

AN - SCOPUS:36549102728

SN - 0003-6951

VL - 52

SP - 1768

EP - 1770

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Molecular beam epitaxial GaAs optical detectors on silica fibers

Abstract

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