Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit

Yu Heng Hong, Ching Yao Liu, Jun Da Chen, Chun Yen Peng, Li Chuan Tang, Tien Chang Lu, Chun Hsiung Lin, Wei Hua Chieng, Edward Yi Chang, Shih Chen Chen*, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, a paradigm for modulating the light emission performance of photonic-crystal surface-emitting laser (PCSEL) via GaN high electron mobility transistor (HEMT) driving circuit is proposed for the first time. For light detection and ranging (LiDAR) system, a faster pulse repetition frequency with shorter pulse width can provide not only high resolution but also sufficiently precise range resolution. Hereupon, comprehensive analyses for such an integrated system are conducted with not only electro-optical responses but also the corresponding optical behaviors. The relevant electrical characteristics of the employed GaN HEMT are examined at first. Next, the integrated system on a matrix board with its corresponding circuit topology is discussed, illustrating the relevant operating principles. Thereby, sufficient systematical scrutinization for relevant light emissions is performed for both photodiode responses and the optical behaviors under different conditions, paving a holistic panorama for the LiDAR system. Thus, prospects for the next generation LiDAR system in high-power and high-speed operation can be expected.

Original languageEnglish
Article number1242
JournalCrystals
Volume12
Issue number9
DOIs
StatePublished - Sep 2022

Keywords

  • D-mode
  • depletion mode
  • driving circuit
  • HEMT
  • high electron mobility transistor
  • LiDAR
  • light detection and ranging
  • PCSEL
  • photonic-crystal surface-emitting laser

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