Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin; Ming-Dou Ker

doi:10.1109/ISNE.2010.5669189

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

Original language	English
Title of host publication	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages	104-107
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2010.5669189
State	Published - 2010
Event	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 18 Nov 2010 → 19 Nov 2010

Publication series

Name	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Conference

Conference	2010 International Symposium on Next-Generation Electronics, ISNE 2010
Country/Territory	Taiwan
City	Kaohsiung
Period	18/11/10 → 19/11/10

Keywords

Electrostatic discharges (ESD)
Low-capacitance (low-C)
Modeling
Radio-frequency (RF)
Silicon-controlled rectifier (SCR)

Access to Document

10.1109/ISNE.2010.5669189

Cite this

Lin, C. Y., & Ker, M.-D. (2010). Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 104-107). Article 5669189 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669189

@inproceedings{cee1fd76215a492bb82b907bc750fec1,

title = "Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs",

abstract = "Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.",

keywords = "Electrostatic discharges (ESD), Low-capacitance (low-C), Modeling, Radio-frequency (RF), Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ming-Dou Ker",

year = "2010",

doi = "10.1109/ISNE.2010.5669189",

language = "English",

isbn = "9781424466948",

series = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

pages = "104--107",

booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

note = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 ; Conference date: 18-11-2010 Through 19-11-2010",

}

Lin, CY & Ker, M-D 2010, Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669189, 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program, pp. 104-107, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 18/11/10. https://doi.org/10.1109/ISNE.2010.5669189

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. / Lin, Chun Yu; Ker, Ming-Dou.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 104-107 5669189 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Chun Yu

AU - Ker, Ming-Dou

PY - 2010

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N2 - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

AB - Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

KW - Electrostatic discharges (ESD)

KW - Low-capacitance (low-C)

KW - Modeling

KW - Radio-frequency (RF)

KW - Silicon-controlled rectifier (SCR)

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M3 - Conference contribution

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SN - 9781424466948

T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

SP - 104

EP - 107

BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

T2 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010

Y2 - 18 November 2010 through 19 November 2010

ER -

Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

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