Abstract
An extremely simple model for the impurity profile in an ion-implanted channel layer of an IGFET is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel silicon devices.
Original language | English |
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Pages (from-to) | 116-117 |
Number of pages | 2 |
Journal | IEEE Transactions on Electron Devices |
Volume | 28 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1981 |