Modeling RF noise of multi-fingers 0.18-μm node MOSFETS

C. C. Liao; Z. M. Lai; C. F. Lee; J. T. Lin; D. S. Yu; Albert Chin

Modeling RF noise of multi-fingers 0.18-μm node MOSFETS

C. C. Liao^*, Z. M. Lai, C. F. Lee, J. T. Lin, D. S. Yu, Albert Chin

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NF_min) self-consistently in 0.18μm node MOSFETs. The as-measured NF_min shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NF_min shows a weaker finger number dependence than as-measured NF_min and intrinsic NF_min of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NF_min allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.

Original language	English
Pages	6-10
Number of pages	5
State	Published - Sep 2004
Event	3rd International Conference on Semiconductor Technology, ISTC2004 - Shanghai, China Duration: 15 Sep 2004 → 17 Sep 2004

Conference

Conference	3rd International Conference on Semiconductor Technology, ISTC2004
Country/Territory	China
City	Shanghai
Period	15/09/04 → 17/09/04

Cite this

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title = "Modeling RF noise of multi-fingers 0.18-μm node MOSFETS",

abstract = "We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NFmin) self-consistently in 0.18μm node MOSFETs. The as-measured NFmin shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NFmin shows a weaker finger number dependence than as-measured NFmin and intrinsic NFmin of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NFmin allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.",

author = "Liao, {C. C.} and Lai, {Z. M.} and Lee, {C. F.} and Lin, {J. T.} and Yu, {D. S.} and Albert Chin",

year = "2004",

month = sep,

language = "English",

pages = "6--10",

note = "3rd International Conference on Semiconductor Technology, ISTC2004 ; Conference date: 15-09-2004 Through 17-09-2004",

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TY - CONF

T1 - Modeling RF noise of multi-fingers 0.18-μm node MOSFETS

AU - Liao, C. C.

AU - Lai, Z. M.

AU - Lee, C. F.

AU - Lin, J. T.

AU - Yu, D. S.

AU - Chin, Albert

PY - 2004/9

Y1 - 2004/9

N2 - We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NFmin) self-consistently in 0.18μm node MOSFETs. The as-measured NFmin shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NFmin shows a weaker finger number dependence than as-measured NFmin and intrinsic NFmin of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NFmin allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.

AB - We have developed an accurate equivalent circuit model to simulate the DC I-V, S-parameters and minimum noise figure (NFmin) self-consistently in 0.18μm node MOSFETs. The as-measured NFmin shows a decreasing trend as increasing gate fingers in a multi-fingered layout. The de-embedded intrinsic NFmin shows a weaker finger number dependence than as-measured NFmin and intrinsic NFmin of 2.5 dB and 1.8 dB are obtained for 6 and 64 fingered 0.18 μm MOSFETs, respectively. This result is similar with our recent reports of 0.13 μm node MOSFETs (80nm physical gate length). The weak finger number dependence on NFmin allows achieving low RF noise and power consumption in the small-fingered MOSFET layout.

UR - http://www.scopus.com/inward/record.url?scp=28844433076&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28844433076

SP - 6

EP - 10

T2 - 3rd International Conference on Semiconductor Technology, ISTC2004

Y2 - 15 September 2004 through 17 September 2004

ER -

Modeling RF noise of multi-fingers 0.18-μm node MOSFETS

Abstract

Conference

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