Modeling on increase of N-P-N and P-N-P current gain by hydrogen electromigration in polysilicon emitters

J. Zhao*, G. P. Li, K. Y. Liao, M. R. Chin, J. Y.C. Sun, P. Ratnam

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A unified analytical model that relates the increase of current gain to forward current stress is presented for both poly emitter n-p-n and p-n-p transistors. This model is based on electromigration of atomic hydrogen and its subsequent passivation of dangling bonds at polysilicon grain boundaries and poly/mono-silicon interface, the comparison between experiment and simulation results is also presented.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages557-560
Number of pages4
ISBN (Print)0780314506
StatePublished - 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 5 Dec 19938 Dec 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Conference

ConferenceProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period5/12/938/12/93

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