TY - GEN
T1 - Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack
AU - Hwang, Chih Hong
AU - Li, Yiming
PY - 2010
Y1 - 2010
N2 - The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.
AB - The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.
UR - http://www.scopus.com/inward/record.url?scp=77957902584&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2010.5488942
DO - 10.1109/VTSA.2010.5488942
M3 - Conference contribution
AN - SCOPUS:77957902584
SN - 9781424450633
T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
SP - 74
EP - 75
BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Y2 - 26 April 2010 through 28 April 2010
ER -