Modeling of pocket implanted MOSFETs for anomalous analog behavior

Kanyu Mark Cao; Weidong Liu; Xiaodong Jin; Karthik Vasanth; Keith Green; John Krick; Tom Vrotsos; Chen-Ming Hu

doi:10.1109/IEDM.1999.823872

Modeling of pocket implanted MOSFETs for anomalous analog behavior

Kanyu Mark Cao^*, Weidong Liu, Xiaodong Jin, Karthik Vasanth, Keith Green, John Krick, Tom Vrotsos, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

74 Scopus citations

Abstract

Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823872
State	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

Access to Document

10.1109/IEDM.1999.823872

Cite this

@article{69c904fb12c64f24a02f544160d12a58,

title = "Modeling of pocket implanted MOSFETs for anomalous analog behavior",

abstract = "Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.",

author = "Cao, {Kanyu Mark} and Weidong Liu and Xiaodong Jin and Karthik Vasanth and Keith Green and John Krick and Tom Vrotsos and Chen-Ming Hu",

year = "1999",

doi = "10.1109/IEDM.1999.823872",

language = "English",

pages = "171--174",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Modeling of pocket implanted MOSFETs for anomalous analog behavior

AU - Cao, Kanyu Mark

AU - Liu, Weidong

AU - Jin, Xiaodong

AU - Vasanth, Karthik

AU - Green, Keith

AU - Krick, John

AU - Vrotsos, Tom

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

N2 - Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

AB - Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

UR - http://www.scopus.com/inward/record.url?scp=0033325337&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1999.823872

DO - 10.1109/IEDM.1999.823872

M3 - Conference article

AN - SCOPUS:0033325337

SN - 0163-1918

SP - 171

EP - 174

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Modeling of pocket implanted MOSFETs for anomalous analog behavior

Abstract

Access to Document

Other files and links

Fingerprint

Cite this