Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

M. C. King; Z. M. Lai; C. H. Huang; C. F. Lee; M. W. Ma; C. M. Huang; Yun Chang; Albert Chin

Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

M. C. King^*, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Yun Chang, Albert Chin

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

28 Scopus citations

Abstract

We have modeled the as-measured and deembedded NF_min on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF_.min value and strong dependence on parallel gate fingers, the de-embedded NF_min has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NF_min, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NF_min to 10 GHz, the weak dependence of intrinsic NF_min on gate finger is due to the combined effect of R_gg_m and drain hot carrier noise but both have weak dependence on finger numbers.

Original language	English
Pages	171-174
Number of pages	4
State	Published - 20 Sep 2004
Event	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 6 Jun 2004 → 8 Jun 2004

Conference

Conference	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Fort Worth, TX
Period	6/06/04 → 8/06/04

Cite this

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title = "Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length",

abstract = "We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.",

author = "King, {M. C.} and Lai, {Z. M.} and Huang, {C. H.} and Lee, {C. F.} and Ma, {M. W.} and Huang, {C. M.} and Yun Chang and Albert Chin",

year = "2004",

month = sep,

day = "20",

language = "English",

pages = "171--174",

note = "Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 06-06-2004 Through 08-06-2004",

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TY - CONF

T1 - Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

AU - King, M. C.

AU - Lai, Z. M.

AU - Huang, C. H.

AU - Lee, C. F.

AU - Ma, M. W.

AU - Huang, C. M.

AU - Chang, Yun

AU - Chin, Albert

PY - 2004/9/20

Y1 - 2004/9/20

N2 - We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.

AB - We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.

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M3 - Paper

AN - SCOPUS:4444250838

SP - 171

EP - 174

T2 - Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 6 June 2004 through 8 June 2004

ER -

Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

Abstract

Conference

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