Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

Hsin Hui Huang; Chen Yi Cho; Tzu Yao Lin; Tz Shiuan Huang; Ming Hung Wu; I. Ting Wang; Yu Kai Chang; Chen-Han Chou; Pei Jean Liao; Hsin Yun Yang; Yu De Lin; Po Chun Yeh; Shyh Shyuan Sheu; Tuo Hung Hou

doi:10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies

Hsin Hui Huang^*, Chen Yi Cho, Tzu Yao Lin, Tz Shiuan Huang, Ming Hung Wu, I. Ting Wang, Yu Kai Chang, Chen-Han Chou, Pei Jean Liao, Hsin Yun Yang, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1351-1354
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019559
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

Access to Document

10.1109/IEDM45625.2022.10019559

Cite this

Huang, H. H., Cho, C. Y., Lin, T. Y., Huang, T. S., Wu, M. H., Wang, I. T., Chang, Y. K., Chou, C.-H., Liao, P. J., Yang, H. Y., Lin, Y. D., Yeh, P. C., Sheu, S. S., & Hou, T. H. (2022). Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 1351-1354). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019559

@inproceedings{f7bf3d5f7ac5477599a8543e7348f4da,

title = "Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies",

abstract = "The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.",

author = "Huang, {Hsin Hui} and Cho, {Chen Yi} and Lin, {Tzu Yao} and Huang, {Tz Shiuan} and Wu, {Ming Hung} and Wang, {I. Ting} and Chang, {Yu Kai} and Chen-Han Chou and Liao, {Pei Jean} and Yang, {Hsin Yun} and Lin, {Yu De} and Yeh, {Po Chun} and Sheu, {Shyh Shyuan} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019559",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1351--1354",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美國",

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Huang, HH, Cho, CY, Lin, TY, Huang, TS, Wu, MH, Wang, IT, Chang, YK, Chou, C-H, Liao, PJ, Yang, HY, Lin, YD, Yeh, PC, Sheu, SS & Hou, TH 2022, Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1351-1354, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. / Huang, Hsin Hui; Cho, Chen Yi; Lin, Tzu Yao et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1351-1354 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Huang, Tz Shiuan

AU - Wu, Ming Hung

AU - Wang, I. Ting

AU - Chang, Yu Kai

AU - Chou, Chen-Han

AU - Liao, Pei Jean

AU - Yang, Hsin Yun

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Sheu, Shyh Shyuan

AU - Hou, Tuo Hung

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N2 - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

AB - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

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BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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Huang HH, Cho CY, Lin TY, Huang TS, Wu MH, Wang IT et al. Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1351-1354. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019559