Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies

Hsin Hui Huang; Chen Yi Cho; Tzu Yao Lin; Tz Shiuan Huang; Ming Hung Wu; I. Ting Wang; Yu Kai Chang; Chen Han Chou; Pei Jean Liao; Hsin Yun Yang; Yu De Lin; Po Chun Yeh; Shyh Shyuan Sheu; Tuo Hung Hou

doi:10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies

Hsin Hui Huang^*, Chen Yi Cho, Tzu Yao Lin, Tz Shiuan Huang, Ming Hung Wu, I. Ting Wang, Yu Kai Chang, Chen Han Chou, Pei Jean Liao, Hsin Yun Yang, Yu De Lin, Po Chun Yeh, Shyh Shyuan Sheu, Tuo Hung Hou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1351-1354
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019559
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

Access to Document

10.1109/IEDM45625.2022.10019559

Cite this

Huang, H. H., Cho, C. Y., Lin, T. Y., Huang, T. S., Wu, M. H., Wang, I. T., Chang, Y. K., Chou, C. H., Liao, P. J., Yang, H. Y., Lin, Y. D., Yeh, P. C., Sheu, S. S., & Hou, T. H. (2022). Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 1351-1354). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019559

@inproceedings{f7bf3d5f7ac5477599a8543e7348f4da,

title = "Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5Zr0.5O2and optimized Programming Strategies",

abstract = "The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.",

author = "Huang, {Hsin Hui} and Cho, {Chen Yi} and Lin, {Tzu Yao} and Huang, {Tz Shiuan} and Wu, {Ming Hung} and Wang, {I. Ting} and Chang, {Yu Kai} and Chou, {Chen Han} and Liao, {Pei Jean} and Yang, {Hsin Yun} and Lin, {Yu De} and Yeh, {Po Chun} and Sheu, {Shyh Shyuan} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019559",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1351--1354",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "United States",

}

Huang, HH, Cho, CY, Lin, TY, Huang, TS, Wu, MH, Wang, IT, Chang, YK, Chou, CH, Liao, PJ, Yang, HY, Lin, YD, Yeh, PC, Sheu, SS & Hou, TH 2022, Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1351-1354, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019559

Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. / Huang, Hsin Hui; Cho, Chen Yi; Lin, Tzu Yao et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1351-1354 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Tzu Yao

AU - Huang, Tz Shiuan

AU - Wu, Ming Hung

AU - Wang, I. Ting

AU - Chang, Yu Kai

AU - Chou, Chen Han

AU - Liao, Pei Jean

AU - Yang, Hsin Yun

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Sheu, Shyh Shyuan

AU - Hou, Tuo Hung

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N2 - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

AB - The fatigue-breakdown dilemma that prevents prolonged endurance in the Hf0.5 Zr0.5 O2 (HZO) ferroelectric (FE) capacitor is modeled for the first time. A multi-domain FE-switching model considering the detailed local charge trapping/detrapping, strong depolarization field, and defect generation at interfacial layers (ILs) successfully simulates domain pinning, recovery, and breakdown in polycrystalline HZO. Our model not only shows a good agreement with experiments but also highlights the crucial role of ILs in optimizing endurance. Also, programming strategies using different recovery schemes and a triangular pulse are discussed.

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BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 3 December 2022 through 7 December 2022

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Huang HH, Cho CY, Lin TY, Huang TS, Wu MH, Wang IT et al. Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf_0.5Zr_0.5O₂and optimized Programming Strategies. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1351-1354. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019559