Modeling and simulation of market dynamics for successive generation of flash memory

Yi-Ming Li*, Su Yun Chiang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Impressive growth of the information products market has been sustained by the availability of successful semiconductor non-volatile memory technologies. The key driver is right the flash memory for the mass storage application in portable electronic systems. In this work, we study the market dynamics of successive generations of flash memory using a growth model. The adopted model considers non-uniform influence, asymmetric diffusion, and heterogeneity of the population of potential adaptors. The nonlinear growth model is solved numerically and applied to explore the marketing growth of flash memory in the past years. New technologies of flash memory diffuse through a population of potential buyers over time; the model provides a basis for assessing and forecasting the influence of recent technologies on earlier ones. We further examine the successive generations of flash memory from 128Mb to 1Gbit. Comparison of the simulated results with the realistic data validates the theoretical findings so as to forecast the growth dynamics of market among different generations.

Original languageEnglish
Title of host publication2007 International Conference on Convergence Information Technology, ICCIT 2007
Pages1668-1673
Number of pages6
DOIs
StatePublished - 7 Jan 2008
Event2nd International Conference on Convergent Information Technology, ICCIT 07 - Gyongju, Korea, Republic of
Duration: 21 Nov 200723 Nov 2007

Publication series

Name2007 International Conference on Convergence Information Technology, ICCIT 2007

Conference

Conference2nd International Conference on Convergent Information Technology, ICCIT 07
Country/TerritoryKorea, Republic of
CityGyongju
Period21/11/0723/11/07

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