Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin; Chao-Hsin Chien; Meng Feng Wang; Tiao Yuan Huang; Chun Yen Chang

doi:10.1109/PPID.1997.596761

Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin^*, Chao-Hsin Chien, Meng Feng Wang, Tiao Yuan Huang, Chun Yen Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O₂ plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

Original language	English
Pages	247-250
Number of pages	4
DOIs	https://doi.org/10.1109/PPID.1997.596761
State	Published - 1997
Event	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA Duration: 13 May 1997 → 14 May 1997

Conference

Conference	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
City	Monterey, CA, USA
Period	13/05/97 → 14/05/97

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10.1109/PPID.1997.596761

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title = "Model for photoresist-induced charging damage in ultra-thin gate oxides",

abstract = "The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.",

author = "Horng-Chih Lin and Chao-Hsin Chien and Wang, {Meng Feng} and Huang, {Tiao Yuan} and Chang, {Chun Yen}",

year = "1997",

doi = "10.1109/PPID.1997.596761",

language = "English",

pages = "247--250",

note = "Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage ; Conference date: 13-05-1997 Through 14-05-1997",

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AU - Lin, Horng-Chih

AU - Chien, Chao-Hsin

AU - Wang, Meng Feng

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 1997

Y1 - 1997

N2 - The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

AB - The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

UR - http://www.scopus.com/inward/record.url?scp=0030685554&partnerID=8YFLogxK

U2 - 10.1109/PPID.1997.596761

DO - 10.1109/PPID.1997.596761

M3 - Paper

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EP - 250

T2 - Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage

Y2 - 13 May 1997 through 14 May 1997

ER -

Model for photoresist-induced charging damage in ultra-thin gate oxides

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