Model based sub-resolution assist features using an inverse lithography method

Jue Chin Yu*, Pei-Chen Yu, Hsueh Yung Chao

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations


The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.

Original languageEnglish
Article number714014
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Dec 2008
EventLithography Asia 2008 - Taipei, Taiwan
Duration: 4 Nov 20086 Nov 2008


  • Inverse lithography
  • Optical proximity correction
  • Sub-resolution assist features


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