Model based sub-resolution assist features using an inverse lithography method

Jue Chin Yu; Pei-Chen Yu; Hsueh Yung Chao

doi:10.1117/12.804678

Model based sub-resolution assist features using an inverse lithography method

Jue Chin Yu^*, Pei-Chen Yu, Hsueh Yung Chao

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.

Original language	English
Article number	714014
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7140
DOIs	https://doi.org/10.1117/12.804678
State	Published - 1 Dec 2008
Event	Lithography Asia 2008 - Taipei, Taiwan Duration: 4 Nov 2008 → 6 Nov 2008

Keywords

Inverse lithography
Optical proximity correction
Sub-resolution assist features

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10.1117/12.804678

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title = "Model based sub-resolution assist features using an inverse lithography method",

abstract = "The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.",

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author = "Yu, {Jue Chin} and Pei-Chen Yu and Chao, {Hsueh Yung}",

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AU - Yu, Jue Chin

AU - Yu, Pei-Chen

AU - Chao, Hsueh Yung

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N2 - The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.

AB - The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution.

KW - Inverse lithography

KW - Optical proximity correction

KW - Sub-resolution assist features

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DO - 10.1117/12.804678

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VL - 7140

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 714014

T2 - Lithography Asia 2008

Y2 - 4 November 2008 through 6 November 2008

ER -

Model based sub-resolution assist features using an inverse lithography method

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Keywords

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