Abstract
GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers.
Original language | English |
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Article number | 6348389 |
Pages (from-to) | 171-172 |
Number of pages | 2 |
Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
DOIs | |
State | Published - 10 Oct 2012 |
Event | 23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States Duration: 7 Oct 2012 → 10 Oct 2012 |
Keywords
- Laser modes
- Surface emitting lasers
- Photonics
- Measurement by laser beam
- Laser excitation