MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength

Hao-Chung Kuo*, Y. S. Chang, C. F. Lin, Tien-Chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalJournal of Crystal Growth
Volume261
Issue number2-3
DOIs
StatePublished - 19 Jan 2004
EventProceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States
Duration: 20 Jul 200324 Jul 2003

Keywords

  • A1. Characterization
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting gallium arsenide
  • B2. Semiconducting quaternary alloys
  • B3. Laser diodes
  • B3. Optical fiber devices

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