Mobility improvement of HfO2 LTPS TFTs with nitrogen implantation

Ming Wen Ma*, Tsung Yu Yang, Kuo Hsing Kao, Chun Jung Su, Chih Yang Chen, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 × 1013 and 5 × 1014cm-2 were implanted after gate dielectric deposition. Significant improvement 94. 4% and 74.4% on transconductance Gm and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0. 177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Number of pages4
StatePublished - Mar 2007
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 12 Mar 200716 Mar 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007


ConferenceAsia Display 2007, AD'07


  • HfO
  • High-k gate dielectric
  • Nitrogen implantation
  • Thin-film transistors (TFTs)


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