Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions

Yung Chun Wu, Yuan Chun Wu, Cheng Wei Chou, Chun Hao Tu, Jen Chung Lou, Chun Yen Chang, Ting Chang Chang, Po-Tsun Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

A new method for enhancing the mobility of the polysilicon thin-film transistors (poly-Si TFT) by pattern-dependent metal-induced-lateral- crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (MIO) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm2/Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.

Original languageEnglish
Article numberP-12
Pages (from-to)268-271
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume36
Issue number1
DOIs
StatePublished - 1 Jan 2005
EventSID Symposium Digest of Technical Papers - Boston, MA, United States
Duration: 29 Jul 200429 Jul 2004

Fingerprint

Dive into the research topics of 'Mobility enhancement of pattern-dependent metal-induced lateral crystallization polysilicon thin-film transistors with different dimensions'. Together they form a unique fingerprint.

Cite this