In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance, In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Sep 2004|