Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Tsung Yi Lu; Tien-Sheng Chao

doi:10.1109/LED.2005.845499

Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Tsung Yi Lu^*, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G_M further to 29% more than the single-poly-Si gate structure without SiN capping layer.

Original language	English
Pages (from-to)	267-269
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	4
DOIs	https://doi.org/10.1109/LED.2005.845499
State	Published - 1 Apr 2005

Keywords

Mobility
nMOSFET
Poly-Si
Strain

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title = "Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride",

abstract = "A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.",

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AU - Chao, Tien-Sheng

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N2 - A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

AB - A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.

KW - Mobility

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KW - Poly-Si

KW - Strain

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

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Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

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Keywords

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