Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Dun Bao Ruan; Po-Tsun Liu; Yu Chuan Chiu; Po Yi Kuo; Min Chin Yu; Kai Jhih Gan; Ta Chun Chien; Simon M. Sze

doi:10.1039/c7ra13193c

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Dun Bao Ruan, Po-Tsun Liu^*, Yu Chuan Chiu, Po Yi Kuo, Min Chin Yu, Kai Jhih Gan, Ta Chun Chien, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO₂ gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO₂ gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.

Original language	English
Pages (from-to)	6925-6930
Number of pages	6
Journal	RSC Advances
Volume	8
Issue number	13
DOIs	https://doi.org/10.1039/c7ra13193c
State	Published - 2018

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title = "Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer",

abstract = "This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.",

author = "Ruan, {Dun Bao} and Po-Tsun Liu and Chiu, {Yu Chuan} and Kuo, {Po Yi} and Yu, {Min Chin} and Gan, {Kai Jhih} and Chien, {Ta Chun} and Sze, {Simon M.}",

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year = "2018",

doi = "10.1039/c7ra13193c",

language = "English",

volume = "8",

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TY - JOUR

T1 - Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

AU - Ruan, Dun Bao

AU - Liu, Po-Tsun

AU - Chiu, Yu Chuan

AU - Kuo, Po Yi

AU - Yu, Min Chin

AU - Gan, Kai Jhih

AU - Chien, Ta Chun

AU - Sze, Simon M.

PY - 2018

Y1 - 2018

N2 - This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.

AB - This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO2 gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO2 gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air.

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U2 - 10.1039/c7ra13193c

DO - 10.1039/c7ra13193c

M3 - Article

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EP - 6930

JO - RSC Advances

JF - RSC Advances

IS - 13

ER -

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

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