Mix-and-match lithography processes for 0.1 μm MOS transistor device fabrication

Keyphrases

• Electron Beam Lithography 100%
• Lithography Process 100%
• Transistor Device 100%
• Device Fabrication 100%
• MOS Transistor 100%
• Mix-and-match 100%
• Accelerating Voltage 66%
• Polysilicon Gate 66%
• Polysilicon 33%
• Silica 33%
• Well-defined 33%
• Oxides 33%
• Effective Method 33%
• Anisotropy 33%
• Etching Process 33%
• Electron Cyclotron Resonance 33%
• Exposure Time 33%
• Chemically Amplified Resist 33%
• Cross-sectional Shape 33%
• Gas Plasma 33%
• Resist Process 33%
• Negative Type 33%
• Beam Current 33%
• Stepper 33%
• Thin Masks 33%
• Lithography System 33%

Engineering

• Lithography 100%
• Electron Optical Lithography 100%
• Polysilicon 100%
• Accelerating Voltage 66%
• Feature Size 33%
• Cyclotron Resonance 33%
• Optimum Condition 33%
• Exposure Time 33%
• Etching Process 33%
• Gas Plasma 33%
• Silicon Dioxide 33%

Material Science

• Transistor 100%
• Lithography 100%
• Device Fabrication 100%
• Oxide Compound 25%
• Anisotropy 25%