This paper, based on the IRDS 2022 technology node, investigates the DIBL and short-channel effects for InGaAs negative-capacitance FinFETs (NC-FinFETs) through a theoretical subthreshold drain current model considering key effects including negative capacitance, quantum confinement and source-to-drain tunneling. Due to the impact of negative capacitance on the source-to-drain potential profile, tunneling distance and its drain-bias dependence, the short-channel effects can be substantially improved for InGaAs NC-FinFETs. Our study indicates that, with the larger NC effect of the III-V channel, the gap in DIBL and subthreshold swing between InGaAs and Si FinFETs in the sub-20 nm gate-length regime can become much closer. Our study may provide insights for future supply-voltage/power scaling of logic devices with high-mobility channel.
- Drain induced barrier lowering (DIBL)
- III-V FinFET
- Negative-capacitance FET (NCFET)
- Short-channel effect