Mitigating DIBL and Short-Channel Effects for III-V FinFETs with Negative-Capacitance Effects

Shih En Huang, Wei Xiang You, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This paper, based on the IRDS 2022 technology node, investigates the DIBL and short-channel effects for InGaAs negative-capacitance FinFETs (NC-FinFETs) through a theoretical subthreshold drain current model considering key effects including negative capacitance, quantum confinement and source-to-drain tunneling. Due to the impact of negative capacitance on the source-to-drain potential profile, tunneling distance and its drain-bias dependence, the short-channel effects can be substantially improved for InGaAs NC-FinFETs. Our study indicates that, with the larger NC effect of the III-V channel, the gap in DIBL and subthreshold swing between InGaAs and Si FinFETs in the sub-20 nm gate-length regime can become much closer. Our study may provide insights for future supply-voltage/power scaling of logic devices with high-mobility channel.

Original languageEnglish
Pages (from-to)65-71
Number of pages7
JournalIEEE Journal of the Electron Devices Society
StatePublished - 2022


  • Drain induced barrier lowering (DIBL)
  • III-V FinFET
  • InGaAs
  • Negative-capacitance FET (NCFET)
  • Short-channel effect


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