Miniband formulation of bilayer type II Ge/Si quantum dot superlattices

Yi Chia Tsai, Ming Yi Lee, Yi-ming Li, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This article presents a computational study on the impact of layer distance on the miniband formulation and density of state under different quantum dot structural parameters-height, interdot space-in a bilayer and well-aligned Ge/Si quantum-dot array. The miniband bandwidth, energy and effective bandgap is tunable by introducing an additional quantum dot layer. When the vertical distance between layers is smaller than 2.0 nm, the individual band structure of each layer will separate and couple into a broader bandwidth. The effective bandgap decreases since the highest excited states, with broader bandwidth, mix with and become continuous energy levels.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages891-894
Number of pages4
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/TerritoryJapan
CitySendai
Period22/08/1625/08/16

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