Miniband formulation in Ge/Si quantum dot array

Yi Chia Tsai, Ming Yi Lee, Yi-ming Li, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

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In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters.

Original languageEnglish
Article number04EJ14
JournalJapanese journal of applied physics
Issue number4
StatePublished - Apr 2016


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