Microwave annealing for NiSiGe Schottky junction on SiGe P-channel

Yu Hsien Lin; Yi He Tsai; Chung Chun Hsu; Guang Li Luo; Yao Jen Lee; Chao-Hsin Chien

doi:10.3390/ma8115403

Microwave annealing for NiSiGe Schottky junction on SiGe P-channel

Yu Hsien Lin^*, Yi He Tsai, Chung Chun Hsu, Guang Li Luo, Yao Jen Lee, Chao-Hsin Chien

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si_0.57Ge_0.43/Si) through microwave annealing (MWA) ranging from 200 to 470°C for 150 s in N₂ ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390°C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (I_ON/I_OFF) ratio of ~3 × 10⁵. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

Original language	English
Pages (from-to)	7519-7523
Number of pages	5
Journal	Materials
Volume	8
Issue number	11
DOIs	https://doi.org/10.3390/ma8115403
State	Published - 1 Jan 2015

Keywords

Germanium
Microwave annealing
NiSiGe
Schottky junction

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@article{886fed54aa6e42cfbbdc215794848342,

title = "Microwave annealing for NiSiGe Schottky junction on SiGe P-channel",

abstract = "In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470°C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390°C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.",

keywords = "Germanium, Microwave annealing, NiSiGe, Schottky junction",

author = "Lin, {Yu Hsien} and Tsai, {Yi He} and Hsu, {Chung Chun} and Luo, {Guang Li} and Lee, {Yao Jen} and Chao-Hsin Chien",

year = "2015",

month = jan,

day = "1",

doi = "10.3390/ma8115403",

language = "English",

volume = "8",

pages = "7519--7523",

journal = "Materials",

issn = "1996-1944",

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TY - JOUR

T1 - Microwave annealing for NiSiGe Schottky junction on SiGe P-channel

AU - Lin, Yu Hsien

AU - Tsai, Yi He

AU - Hsu, Chung Chun

AU - Luo, Guang Li

AU - Lee, Yao Jen

AU - Chien, Chao-Hsin

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470°C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390°C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

AB - In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470°C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390°C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

KW - Germanium

KW - Microwave annealing

KW - NiSiGe

KW - Schottky junction

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U2 - 10.3390/ma8115403

DO - 10.3390/ma8115403

M3 - Article

AN - SCOPUS:84949665592

SN - 1996-1944

VL - 8

SP - 7519

EP - 7523

JO - Materials

JF - Materials

IS - 11

ER -

Microwave annealing for NiSiGe Schottky junction on SiGe P-channel

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