Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current; Yao Jen Lee; Yu Lun Lu; Ta Chun Cho; Tien-Sheng Chao; Hiroshi Onoda; Karuppanan Sekar; Nobuhiro Tokoro

doi:10.1109/IWJT.2013.6644511

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Michael I. Current, Yao Jen Lee, Yu Lun Lu, Ta Chun Cho, Tien-Sheng Chao, Hiroshi Onoda, Karuppanan Sekar, Nobuhiro Tokoro

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C₇H₇) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

Original language	English
Pages	84-87
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2013.6644511
State	Published - 2013
Event	2013 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan Duration: 6 Jun 2013 → 7 Jun 2013

Conference

Conference	2013 13th International Workshop on Junction Technology, IWJT 2013
Country/Territory	Japan
City	Kyoto
Period	6/06/13 → 7/06/13

Keywords

Cluster carbon
Microwave anneal
Molecular carbon
Phosphorous doping

Access to Document

10.1109/IWJT.2013.6644511

Cite this

@conference{601674ce84f748b6a6fe589bfefd277b,

title = "Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions",

abstract = "Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.",

keywords = "Cluster carbon, Microwave anneal, Molecular carbon, Phosphorous doping",

author = "Current, {Michael I.} and Lee, {Yao Jen} and Lu, {Yu Lun} and Cho, {Ta Chun} and Tien-Sheng Chao and Hiroshi Onoda and Karuppanan Sekar and Nobuhiro Tokoro",

year = "2013",

doi = "10.1109/IWJT.2013.6644511",

language = "English",

pages = "84--87",

note = "2013 13th International Workshop on Junction Technology, IWJT 2013 ; Conference date: 06-06-2013 Through 07-06-2013",

}

TY - CONF

T1 - Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

AU - Current, Michael I.

AU - Lee, Yao Jen

AU - Lu, Yu Lun

AU - Cho, Ta Chun

AU - Chao, Tien-Sheng

AU - Onoda, Hiroshi

AU - Sekar, Karuppanan

AU - Tokoro, Nobuhiro

PY - 2013

Y1 - 2013

N2 - Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

AB - Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

KW - Cluster carbon

KW - Microwave anneal

KW - Molecular carbon

KW - Phosphorous doping

UR - http://www.scopus.com/inward/record.url?scp=84898656919&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2013.6644511

DO - 10.1109/IWJT.2013.6644511

M3 - Paper

AN - SCOPUS:84898656919

SP - 84

EP - 87

T2 - 2013 13th International Workshop on Junction Technology, IWJT 2013

Y2 - 6 June 2013 through 7 June 2013

ER -

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this