Microstructural investigation of epitaxial aluminum films grown by molecular beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• Epitaxial 100%
• Al Film 100%
• Aluminum Film 100%
• Microstructural Investigation 100%
• Si Substrate 66%
• Sapphire Substrate 66%
• GaAs Substrate 66%
• Interfacial Bonding 66%
• Atomic Force Microscopy 33%
• Gallium Arsenide 33%
• Chemical Composition 33%
• Microstructure 33%
• Diffraction 33%
• Deposited Film 33%
• Sapphire 33%
• Atomic Scale 33%
• Sharp Interface 33%
• Secondary Ion Mass Spectrometry 33%
• Smooth Surface 33%
• Electron Microscopy Imaging 33%
• Epitaxially Grown 33%
• Scanning Transmission Electron Microscopy 33%
• Hydroxide 33%
• Al-Si 33%
• Al Thin Film 33%
• Al Substrate 33%
• Smooth Interface 33%
• Al(111) 33%
• Atomic Resolution Scanning Transmission Electron Microscopy 33%

Engineering

• Si Substrate 100%
• Sapphire Substrate 100%
• Gaas Substrate 100%
• Interfacial Bonding 100%
• Aluminum Film 100%
• Gallium Arsenide 50%
• Thin Films 50%
• Ray Diffraction 50%
• Deposited Film 50%
• Atomic Force Microscopy 50%
• Interlayer 50%
• Smooth Surface 50%

Material Science

• Film 100%
• Aluminum 100%
• Molecular Beam Epitaxy 100%
• Gallium Arsenide 50%
• Sapphire 50%
• Scanning Transmission Electron Microscopy 33%
• Thin Films 16%
• Secondary Ion Mass Spectrometry 16%
• Phase Composition 16%
• Atomic Force Microscopy 16%