Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact

Chih Lin Hsu, Yewchung Sermon Wu, Szu Hung Chen, Kun Lin Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Al/InGaAs, Al/Ti/InGaAs, and Al/Ni/InGaAs contacts were prepared by conducting rapid thermal annealing at different temperatures, and the interfacial reaction was characterized using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The specific contact resistivity of the metal film contacts on n-InGaAs was determined using a circular transmission line measurement. The Al/Ni/InGaAs, Al/Ti/InGaAs, and Al/InGaAs stack contacts remained stable even after the samples were subjected to annealing at 400°C. When the annealing temperature increased to 600°C, Al began melting and clustering due to the formation of Al(Ga) to form Al/InGaAs. An AlNi phase was formed at the interfaces of an Al/Ni/InGaAs contact when it was annealed above 400°C, thus causing the specific resistance and roughness to increase dramatically. Each element of the Al/Ti/InGaAs contact began diffusing when it was annealed beyond 400°C, and an Al3Ti phase was formed above 500°C. The formation of Al3Ti led to the increase in the specific resistance and roughness. Moreover, the as-deposited Al/Ni/InGaAs, Al/Ti/InGaAs and Al/InGaAs samples had specific resistances of 1.11 × 10−5 Ω cm2, 5.11 × 10−5 Ω cm2, and 1.14 × 10−4 Ω cm2, respectively. These results reveal that to develop the Al/Ti/InGaAs and Al/Ni/InGaAs stacks on InGaAs with a low parasitic resistance, the processing temperature should be lower than 400°C.

Original languageEnglish
Pages (from-to)4659-4670
Number of pages12
JournalJournal of Electronic Materials
Issue number8
StatePublished - 1 Aug 2020


  • Contact resistivity
  • InGaAs
  • Interface
  • Microstructures
  • Multilayer metal


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