Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material

Tzu Hao Wang; Hsuan Lee; Chih Ming Chen; Ming Guan Chen; Chi Chang Hu; Yu Jie Chen; Ray-Hua Horng

doi:10.1016/j.microrel.2016.06.012

Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material

Tzu Hao Wang, Hsuan Lee, Chih Ming Chen^*, Ming Guan Chen, Chi Chang Hu, Yu Jie Chen, Ray-Hua Horng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys).

Original language	English
Pages (from-to)	68-75
Number of pages	8
Journal	Microelectronics Reliability
Volume	63
DOIs	https://doi.org/10.1016/j.microrel.2016.06.012
State	Published - 1 Aug 2016

Keywords

Die-bonding
Low-temperature
Microstructure
Optical
Thermal

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title = "Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material",

abstract = "A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys).",

keywords = "Die-bonding, Low-temperature, Microstructure, Optical, Thermal",

author = "Wang, {Tzu Hao} and Hsuan Lee and Chen, {Chih Ming} and Chen, {Ming Guan} and Hu, {Chi Chang} and Chen, {Yu Jie} and Ray-Hua Horng",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

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doi = "10.1016/j.microrel.2016.06.012",

language = "English",

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AU - Wang, Tzu Hao

AU - Lee, Hsuan

AU - Chen, Chih Ming

AU - Chen, Ming Guan

AU - Hu, Chi Chang

AU - Chen, Yu Jie

AU - Horng, Ray-Hua

PY - 2016/8/1

Y1 - 2016/8/1

N2 - A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys).

AB - A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys).

KW - Die-bonding

KW - Low-temperature

KW - Microstructure

KW - Optical

KW - Thermal

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DO - 10.1016/j.microrel.2016.06.012

M3 - Article

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SN - 0026-2714

VL - 63

SP - 68

EP - 75

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material

Abstract

Keywords

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