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Microdisks with quantum dot active regions lasing near 1300 nm at room temperature

  • T. Yang*
  • , J. Cao
  • , Po-Tsung Lee
  • , M. Shih
  • , R. Shafiiha
  • , S. Farrell
  • , J. O'Brien
  • , O. Shchekin
  • , D. Deppe
  • *Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped at room temperature, and lasing occurred in devices that are 2.5 µm in diameter and larger.

Original languageEnglish
Pages1276-1277
Number of pages2
StatePublished - Jun 2003
EventConference on Lasers and Electro-Optics, CLEO 2003 - Baltimore, United States
Duration: 1 Jun 20036 Jun 2003

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2003
Country/TerritoryUnited States
CityBaltimore
Period1/06/036/06/03

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