Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations

Yu Chen Hu; Cheng Hao Chiang; Kuo Hua Chen; Chi Tsung Chiu; Ching Te Chuang; Wei Hwang; Jin-Chern Chiou; Ho Ming Tong; Kuan-Neng Chen

doi:10.1109/IMPACT.2012.6420268

Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations

Yu Chen Hu, Cheng Hao Chiang, Kuo Hua Chen, Chi Tsung Chiu, Ching Te Chuang, Wei Hwang, Jin-Chern Chiou, Ho Ming Tong, Kuan-Neng Chen^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.

Original language	English
Title of host publication	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
Pages	367-369
Number of pages	3
DOIs	https://doi.org/10.1109/IMPACT.2012.6420268
State	Published - 1 Dec 2012
Event	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan Duration: 24 Oct 2012 → 26 Oct 2012

Publication series

Name	Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)	2150-5934
ISSN (Electronic)	2150-5942

Conference

Conference	2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
Country/Territory	Taiwan
City	Taipei
Period	24/10/12 → 26/10/12

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10.1109/IMPACT.2012.6420268

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Hu, Y. C., Chiang, C. H., Chen, K. H., Chiu, C. T., Chuang, C. T., Hwang, W., Chiou, J.-C., Tong, H. M., & Chen, K.-N. (2012). Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings (pp. 367-369). Article 6420268 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). https://doi.org/10.1109/IMPACT.2012.6420268

Hu, Yu Chen ; Chiang, Cheng Hao ; Chen, Kuo Hua et al. / Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations. 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. pp. 367-369 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

@inproceedings{b233f89732dd48b8b11832fedec7e7bc,

title = "Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations",

abstract = "In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.",

author = "Hu, {Yu Chen} and Chiang, {Cheng Hao} and Chen, {Kuo Hua} and Chiu, {Chi Tsung} and Chuang, {Ching Te} and Wei Hwang and Jin-Chern Chiou and Tong, {Ho Ming} and Kuan-Neng Chen",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/IMPACT.2012.6420268",

language = "English",

isbn = "9781467316385",

series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",

pages = "367--369",

booktitle = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings",

note = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 ; Conference date: 24-10-2012 Through 26-10-2012",

}

Hu, YC, Chiang, CH, Chen, KH, Chiu, CT, Chuang, CT, Hwang, W, Chiou, J-C, Tong, HM & Chen, K-N 2012, Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations. in 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings., 6420268, Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT, pp. 367-369, 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012, Taipei, Taiwan, 24/10/12. https://doi.org/10.1109/IMPACT.2012.6420268

Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations. / Hu, Yu Chen; Chiang, Cheng Hao; Chen, Kuo Hua et al.
2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 367-369 6420268 (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chuang, Ching Te

AU - Hwang, Wei

AU - Chiou, Jin-Chern

AU - Tong, Ho Ming

AU - Chen, Kuan-Neng

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AB - In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching, pressure, and RF bias were studied to investigate the process of micro-masking removal.

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Hu YC, Chiang CH, Chen KH, Chiu CT, Chuang CT, Hwang W et al. Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations. In 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings. 2012. p. 367-369. 6420268. (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). doi: 10.1109/IMPACT.2012.6420268

Micro-masking removal of TSV and cavity during ICP etching using parameter control in 3D and MEMS integrations

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