Mg-related deep levels in AlInP

Yu Rue Wu*, Wei Jer Sung, Shih Chang Lee, Tsang Jou Li, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

Original languageEnglish
Pages (from-to)4049-4050
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 B
StatePublished - 15 Jul 1999


  • AlInp
  • DLTS
  • Deep level
  • Defect
  • Depth profile measurement
  • Mg


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