Mg-related deep levels in AlInP

Yu Rue Wu; Wei Jer Sung; Shih Chang Lee; Tsang Jou Li; Wei-I Lee

doi:10.1143/JJAP.38.4049

Mg-related deep levels in AlInP

Yu Rue Wu^*, Wei Jer Sung, Shih Chang Lee, Tsang Jou Li, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

Original language	English
Pages (from-to)	4049-4050
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	7 B
DOIs	https://doi.org/10.1143/JJAP.38.4049
State	Published - 15 Jul 1999

Keywords

AlInp
DLTS
Deep level
Defect
Depth profile measurement
Mg

Access to Document

10.1143/JJAP.38.4049

Cite this

@article{1947b72fc2954a9c9c88fd9db5e9be8f,

title = "Mg-related deep levels in AlInP",

abstract = "The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related{"}defects.",

keywords = "AlInp, DLTS, Deep level, Defect, Depth profile measurement, Mg",

author = "Wu, {Yu Rue} and Sung, {Wei Jer} and Lee, {Shih Chang} and Li, {Tsang Jou} and Wei-I Lee",

year = "1999",

month = jul,

day = "15",

doi = "10.1143/JJAP.38.4049",

language = "English",

volume = "38",

pages = "4049--4050",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 B",

}

TY - JOUR

T1 - Mg-related deep levels in AlInP

AU - Wu, Yu Rue

AU - Sung, Wei Jer

AU - Lee, Shih Chang

AU - Li, Tsang Jou

AU - Lee, Wei-I

PY - 1999/7/15

Y1 - 1999/7/15

N2 - The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

AB - The properties of deep levels found in Mg-doped AllnP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled El and E2, were observed, with the activation energy of 0.19 and 0.514eV, respectively. From distribution profiles measured on trap El, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap El and E2 concentration increase with elevating Mg-dopant concentration. Thus, it seems that these deep levels originate from Mg-related"defects.

KW - AlInp

KW - DLTS

KW - Deep level

KW - Defect

KW - Depth profile measurement

KW - Mg

UR - http://www.scopus.com/inward/record.url?scp=0033340143&partnerID=8YFLogxK

U2 - 10.1143/JJAP.38.4049

DO - 10.1143/JJAP.38.4049

M3 - Article

AN - SCOPUS:0033340143

SN - 0021-4922

VL - 38

SP - 4049

EP - 4050

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 7 B

ER -

Mg-related deep levels in AlInP

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this