Mg-induced terahertz transparency of indium nitride films

Hyeyoung Ahn; J. W. Chia; H. M. Lee; Y. L. Hong; S. Gwo

doi:10.1063/1.3669538

Mg-induced terahertz transparency of indium nitride films

Hyeyoung Ahn^*, J. W. Chia, H. M. Lee, Y. L. Hong, S. Gwo

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of ∼0.2, an excellent agreement in mobilities of two methods is obtained.

Original language	English
Article number	232117
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3669538
State	Published - 5 Dec 2011

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@article{a7bc69492e83450dbd1a58cb7aa7f2ae,

title = "Mg-induced terahertz transparency of indium nitride films",

abstract = "Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of ∼0.2, an excellent agreement in mobilities of two methods is obtained.",

author = "Hyeyoung Ahn and Chia, {J. W.} and Lee, {H. M.} and Hong, {Y. L.} and S. Gwo",

year = "2011",

month = dec,

day = "5",

doi = "10.1063/1.3669538",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Mg-induced terahertz transparency of indium nitride films

AU - Ahn, Hyeyoung

AU - Chia, J. W.

AU - Lee, H. M.

AU - Hong, Y. L.

AU - Gwo, S.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of ∼0.2, an excellent agreement in mobilities of two methods is obtained.

AB - Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of ∼0.2, an excellent agreement in mobilities of two methods is obtained.

UR - http://www.scopus.com/inward/record.url?scp=83455228678&partnerID=8YFLogxK

U2 - 10.1063/1.3669538

DO - 10.1063/1.3669538

M3 - Article

AN - SCOPUS:83455228678

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232117

ER -

Mg-induced terahertz transparency of indium nitride films

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