TY - JOUR
T1 - Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS
AU - Nakayama, H.
AU - Su, Pin
AU - Hu, Chen-Ming
AU - Nakamura, M.
AU - Komatsu, H.
AU - Takeshita, K.
AU - Komatsu, Y.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18μm PD (Partially Depleted) SOI technology. In this methodology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc IV data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.
AB - Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18μm PD (Partially Depleted) SOI technology. In this methodology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc IV data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.
UR - http://www.scopus.com/inward/record.url?scp=0034822326&partnerID=8YFLogxK
U2 - 10.1109/CICC.2001.929805
DO - 10.1109/CICC.2001.929805
M3 - Article
AN - SCOPUS:0034822326
SN - 0886-5930
SP - 381
EP - 384
JO - Proceedings of the Custom Integrated Circuits Conference
JF - Proceedings of the Custom Integrated Circuits Conference
ER -