Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

T. C. Chang; T. M. Tsai; Po-Tsun Liu; S. T. Yan; Y. C. Chang; H. Aoki; S. M. Sze; Tseung-Yuen Tseng

doi:10.1116/1.1755218

Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

T. C. Chang^*, T. M. Tsai, Po-Tsun Liu, S. T. Yan, Y. C. Chang, H. Aoki, S. M. Sze, Tseung-Yuen Tseng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality

Original language	English
Pages (from-to)	1196-1201
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1755218
State	Published - 1 May 2004

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Chang, T. C., Tsai, T. M., Liu, P.-T., Yan, S. T., Chang, Y. C., Aoki, H., Sze, S. M., & Tseng, T.-Y. (2004). Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(3), 1196-1201. https://doi.org/10.1116/1.1755218

@article{d6aeffd4963944ddb71e746e54753fb5,

title = "Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application",

abstract = "In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality",

author = "Chang, {T. C.} and Tsai, {T. M.} and Po-Tsun Liu and Yan, {S. T.} and Chang, {Y. C.} and H. Aoki and Sze, {S. M.} and Tseung-Yuen Tseng",

year = "2004",

month = may,

day = "1",

doi = "10.1116/1.1755218",

language = "English",

volume = "22",

pages = "1196--1201",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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Chang, TC, Tsai, TM, Liu, P-T, Yan, ST, Chang, YC, Aoki, H, Sze, SM & Tseng, T-Y 2004, 'Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 3, pp. 1196-1201. https://doi.org/10.1116/1.1755218

Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application. / Chang, T. C.; Tsai, T. M.; Liu, Po-Tsun et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1196-1201.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

AU - Chang, T. C.

AU - Tsai, T. M.

AU - Liu, Po-Tsun

AU - Yan, S. T.

AU - Chang, Y. C.

AU - Aoki, H.

AU - Sze, S. M.

AU - Tseng, Tseung-Yuen

PY - 2004/5/1

Y1 - 2004/5/1

N2 - In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality

AB - In this work, characteristics of low-k methyl-silsesquiazane (MSZ) for the chemical-mechanical-planarization (CMP) process using oxygen plasma pretreatment were investigated in detail. The low-dielectric-constant (low-k) MSZ was prepared by a spin-on deposition process. The resultant wafers were followed by an oxygen (O2)(O2) plasma treatment. After oxygen plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O2O2 plasma pretreatment was increased as much as two times in magnitude, as compared to that of the MSZ without O2O2 plasma pretreatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated that the modification surfaces that resulted from O2O2-plasma treatment facilitated CMP MSZ. After CMP polishing, the MSZ film still maintained low-k quality

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

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