Metalorganic chemical vapor deposition of insb using trineopentylindium

Jyh-Cheng Chen; Wei-Kuo Chen; Pao Lo Liu; J. Maloney; O. T. Beachley

doi:10.1117/12.943934

Metalorganic chemical vapor deposition of insb using trineopentylindium

Jyh-Cheng Chen, Wei-Kuo Chen, Pao Lo Liu, J. Maloney, O. T. Beachley

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Abstract

The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	877
DOIs	https://doi.org/10.1117/12.943934
State	Published - 18 May 1988

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title = "Metalorganic chemical vapor deposition of insb using trineopentylindium",

abstract = "The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.",

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year = "1988",

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doi = "10.1117/12.943934",

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T1 - Metalorganic chemical vapor deposition of insb using trineopentylindium

AU - Chen, Jyh-Cheng

AU - Chen, Wei-Kuo

AU - Liu, Pao Lo

AU - Maloney, J.

AU - Beachley, O. T.

PY - 1988/5/18

Y1 - 1988/5/18

N2 - The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

AB - The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp^ has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp^. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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Metalorganic chemical vapor deposition of insb using trineopentylindium

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