Abstract
Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) draw significant attention due to their ultrahigh electrical bandwidth performances. A review is given of the advantages and applications of LTG-GaAs based metal-semiconductor-metal traveling wave photodetectors (MSMTWPDs). The ultra-high speed and record high power-bandwidth product performances in both short (∼800nm) and long (∼1300nm) wavelength regimes are discussed.
Original language | English |
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Pages (from-to) | 445-446 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
DOIs | |
State | Published - 2002 |
Event | 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002 |