Abstract
NbxTa(1-x)NyOmCn diffusion barriers deposited by chemical vapor deposition (CVD) for copper metallization have been investigated. The barriers were deposited at 375 °C with tetrakis-diethylamido-niobium and pentakis-diethylamido-tantalum as precursors. Amorphous thin films can be obtained by thermal deposition at temperatures from 500 to 600 °C. The activation energy of the metal-organic CVD (MOCVD) process was determined to be 79.1±4.8 kJ/mol. By the incorporation of NH3 gas into reactants, both MOCVD deposition temperature and carbon concentration in the NbxTa(1-x)NyOmCn films were reduced. In addition, NH3-plasma post-treatment was implemented to prevent oxygen from being introduced into the barrier films.
Original language | English |
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Pages (from-to) | 548-552 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 420-421 |
DOIs | |
State | Published - 2 Dec 2002 |
Keywords
- Chemical vapor deposition
- Cu metallization
- Diffusion barrier
- Nb
- Nitride
- Ta