TY - JOUR
T1 - Metal Organic Chemical Vapor Deposition-Grown High-Power Photonic-Crystal Surface-Emitting Lasers toward L Band
AU - Chen, Lih Ren
AU - Chang, Chia Jui
AU - Wu, Yi Jing
AU - Liu, Cheng Lin
AU - Lin, Wei
AU - Lu, Tien Chang
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/11/1
Y1 - 2023/11/1
N2 - High-power lasers emitting in the L band wavelength range are highly desirable for various applications, including light detection and ranging, industrial applications, military applications, gas sensing, and optical communication. In this study, we present our research on InP-based photonic-crystal surface-emitting lasers (PCSELs) designed to achieve high-power emission in the L band while maintaining a compact device size. To enable vertical laser emission, we incorporated embedded air voids within a 2D photonic crystal (PC) structure by epitaxial overgrowth. The PC was carefully designed to facilitate lasing at the PC band edge of the Γ point. While the fabrication of InP-based distributed feedback edge-emitting lasers with epitaxial regrowth and p-type cladding layers has reached commercial maturity, the process of retaining air holes presented unique challenges in our work. We conducted an investigation into the regrowth processes, aiming to preserve the air voids while achieving an atomically flat p-type surface for our flip-chip device structure. The flat surface is crucial to minimize scattering losses and ensure optimal reflectivity of the p-side metal, resulting in higher output efficiency. The PCSELs demonstrated in our study achieved an optical power of more than 150 mW in the L band, utilizing an aperture of only 280 μm in diameter. We anticipate that with further optimization, we can achieve even higher power and efficiency levels.
AB - High-power lasers emitting in the L band wavelength range are highly desirable for various applications, including light detection and ranging, industrial applications, military applications, gas sensing, and optical communication. In this study, we present our research on InP-based photonic-crystal surface-emitting lasers (PCSELs) designed to achieve high-power emission in the L band while maintaining a compact device size. To enable vertical laser emission, we incorporated embedded air voids within a 2D photonic crystal (PC) structure by epitaxial overgrowth. The PC was carefully designed to facilitate lasing at the PC band edge of the Γ point. While the fabrication of InP-based distributed feedback edge-emitting lasers with epitaxial regrowth and p-type cladding layers has reached commercial maturity, the process of retaining air holes presented unique challenges in our work. We conducted an investigation into the regrowth processes, aiming to preserve the air voids while achieving an atomically flat p-type surface for our flip-chip device structure. The flat surface is crucial to minimize scattering losses and ensure optimal reflectivity of the p-side metal, resulting in higher output efficiency. The PCSELs demonstrated in our study achieved an optical power of more than 150 mW in the L band, utilizing an aperture of only 280 μm in diameter. We anticipate that with further optimization, we can achieve even higher power and efficiency levels.
UR - http://www.scopus.com/inward/record.url?scp=85177186875&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.3c00849
DO - 10.1021/acs.cgd.3c00849
M3 - Article
AN - SCOPUS:85177186875
SN - 1528-7483
VL - 23
SP - 8132
EP - 8138
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 11
ER -