Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Ray Hua Horng; Apoorva Sood; Siddharth Rana; Niall Tumity; Fu Gow Tarntair; Catherine Langpoklakpam; Hao Chung Kuo; Jitendra Pratap Singh

doi:10.1016/j.mtadv.2023.100382

Metal-insulator-semiconductor type diode based on implanted β-Ga₂O₃ epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Ray Hua Horng^*, Apoorva Sood, Siddharth Rana, Niall Tumity, Fu Gow Tarntair, Catherine Langpoklakpam, Hao Chung Kuo, Jitendra Pratap Singh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Conductive β-Ga₂O₃ epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga₂O₃ epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.

Original language	English
Article number	100382
Journal	Materials Today Advances
Volume	18
DOIs	https://doi.org/10.1016/j.mtadv.2023.100382
State	Published - Jun 2023

Keywords

Metal-insulator-semiconductor diode
Metalorganic chemical vapor deposition
β-GaO

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10.1016/j.mtadv.2023.100382

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title = "Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition",

abstract = "Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.",

keywords = "Metal-insulator-semiconductor diode, Metalorganic chemical vapor deposition, β-GaO",

author = "Horng, {Ray Hua} and Apoorva Sood and Siddharth Rana and Niall Tumity and Tarntair, {Fu Gow} and Catherine Langpoklakpam and Kuo, {Hao Chung} and Singh, {Jitendra Pratap}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors",

year = "2023",

month = jun,

doi = "10.1016/j.mtadv.2023.100382",

language = "English",

volume = "18",

journal = "Materials Today Advances",

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T1 - Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

AU - Horng, Ray Hua

AU - Sood, Apoorva

AU - Rana, Siddharth

AU - Tumity, Niall

AU - Tarntair, Fu Gow

AU - Langpoklakpam, Catherine

AU - Kuo, Hao Chung

AU - Singh, Jitendra Pratap

PY - 2023/6

Y1 - 2023/6

N2 - Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.

AB - Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.

KW - Metal-insulator-semiconductor diode

KW - Metalorganic chemical vapor deposition

KW - β-GaO

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U2 - 10.1016/j.mtadv.2023.100382

DO - 10.1016/j.mtadv.2023.100382

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SN - 2590-0498

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JO - Materials Today Advances

JF - Materials Today Advances

M1 - 100382

ER -

Metal-insulator-semiconductor type diode based on implanted β-Ga₂O₃ epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Abstract

Keywords

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