Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities

C. C. Liao; T. C. Ku; M. H. Lin; Lang Zeng; Jinfeng Kang; Xiaoyan Liu; Albert Chin

doi:10.1109/LED.2012.2230241

Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO ₂ Si at wide range carrier densities

C. C. Liao^*, T. C. Ku, M. H. Lin, Lang Zeng, Jinfeng Kang, Xiaoyan Liu, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High-performance TaN/TiLaO/La₂O₃SiO ₂(111)-Ge nMOSFETs show high mobility of 432 cm²Vs at 10¹³cm^-2 carrier density (N_s), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO₂Si universal mobility at wide medium-high N_s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO ₂ interfacial layer, and YbGe_xn-Ge contact.

Original language	English
Article number	6403496
Pages (from-to)	163-165
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2230241
State	Published - 2013

Keywords

(111)
Annealing
Ge
YbGe
high-κ
laser

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10.1109/LED.2012.2230241

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title = "Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities",

abstract = "High-performance TaN/TiLaO/La2O3SiO 2(111)-Ge nMOSFETs show high mobility of 432 cm2Vs at 1013cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO 2 interfacial layer, and YbGexn-Ge contact.",

keywords = "(111), Annealing, Ge, YbGe, high-κ, laser",

author = "Liao, {C. C.} and Ku, {T. C.} and Lin, {M. H.} and Lang Zeng and Jinfeng Kang and Xiaoyan Liu and Albert Chin",

year = "2013",

doi = "10.1109/LED.2012.2230241",

language = "English",

volume = "34",

pages = "163--165",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities

AU - Liao, C. C.

AU - Ku, T. C.

AU - Lin, M. H.

AU - Zeng, Lang

AU - Kang, Jinfeng

AU - Liu, Xiaoyan

AU - Chin, Albert

PY - 2013

Y1 - 2013

N2 - High-performance TaN/TiLaO/La2O3SiO 2(111)-Ge nMOSFETs show high mobility of 432 cm2Vs at 1013cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO 2 interfacial layer, and YbGexn-Ge contact.

AB - High-performance TaN/TiLaO/La2O3SiO 2(111)-Ge nMOSFETs show high mobility of 432 cm2Vs at 1013cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO 2 interfacial layer, and YbGexn-Ge contact.

KW - (111)

KW - Annealing

KW - Ge

KW - YbGe

KW - high-κ

KW - laser

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U2 - 10.1109/LED.2012.2230241

DO - 10.1109/LED.2012.2230241

M3 - Article

AN - SCOPUS:84873059429

SN - 0741-3106

VL - 34

SP - 163

EP - 165

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 2

M1 - 6403496

ER -

Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO ₂ Si at wide range carrier densities

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Keywords

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