Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio

Hui Wen Cheng; Yiming Li

doi:10.1109/SMELEC.2010.5549472

Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio

Hui Wen Cheng, Yiming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σI_off/ σI_on are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate (AR = 1) and quasi-planar (AR = 0.5) structures, where gate materials TiN and MoN are considered in n- and p-typed FETs. Compared with nFET, the WKF of pFET is larger than that of n-typed device due to the gate material having wider work-function variation. The 3D device simulation study on WKF-induced σI_off/ σI_on benefits fabrication of nulti-fin devices.

Original language	English
Title of host publication	ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages	48-51
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2010.5549472
State	Published - 2010
Event	2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia Duration: 28 Jun 2010 → 30 Jun 2010

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference	2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
Country/Territory	Malaysia
City	Melaka
Period	28/06/10 → 30/06/10

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10.1109/SMELEC.2010.5549472

Cite this

Cheng, H. W., & Li, Y. (2010). Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio. In ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics (pp. 48-51). Article 5549472 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2010.5549472

@inproceedings{2376ffca0e9f44cabd2a392f827db76f,

title = "Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio",

abstract = "The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σIoff/ σIon are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate (AR = 1) and quasi-planar (AR = 0.5) structures, where gate materials TiN and MoN are considered in n- and p-typed FETs. Compared with nFET, the WKF of pFET is larger than that of n-typed device due to the gate material having wider work-function variation. The 3D device simulation study on WKF-induced σIoff/ σIon benefits fabrication of nulti-fin devices.",

author = "Cheng, {Hui Wen} and Yiming Li",

year = "2010",

doi = "10.1109/SMELEC.2010.5549472",

language = "English",

isbn = "9781424466092",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "48--51",

booktitle = "ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics",

note = "2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 ; Conference date: 28-06-2010 Through 30-06-2010",

}

Cheng, HW & Li, Y 2010, Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio. in ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics., 5549472, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 48-51, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, Malaysia, 28/06/10. https://doi.org/10.1109/SMELEC.2010.5549472

Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio. / Cheng, Hui Wen; Li, Yiming.
ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics. 2010. p. 48-51 5549472 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σIoff/ σIon are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate (AR = 1) and quasi-planar (AR = 0.5) structures, where gate materials TiN and MoN are considered in n- and p-typed FETs. Compared with nFET, the WKF of pFET is larger than that of n-typed device due to the gate material having wider work-function variation. The 3D device simulation study on WKF-induced σIoff/ σIon benefits fabrication of nulti-fin devices.

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Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio

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