Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation

Hsuehli Liu; Chunyen Chou; Linchia Huang; Wilson Guo; Peichen Yu; Chunghsuan Huang; Chaujern Cheng

doi:10.1117/12.2677996

Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation

Hsuehli Liu^*, Chunyen Chou, Linchia Huang, Wilson Guo, Peichen Yu, Chunghsuan Huang, Chaujern Cheng

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.

Original language	English
Title of host publication	Metamaterials, Metadevices, and Metasystems 2023
Editors	Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev
Publisher	SPIE
ISBN (Electronic)	9781510665064
DOIs	https://doi.org/10.1117/12.2677996
State	Published - 2023
Event	Metamaterials, Metadevices, and Metasystems 2023 - San Diego, United States Duration: 20 Aug 2023 → 23 Aug 2023

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12646
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Metamaterials, Metadevices, and Metasystems 2023
Country/Territory	United States
City	San Diego
Period	20/08/23 → 23/08/23

Keywords

Critical dimension (CD)
DUV photolithography
Fully convolutional network (FCN)
Gerchberg-Saxton algorithm
Optical phase conjugation
Optical proximity correction (OPC)
Wavefront shaping
lithographic model

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10.1117/12.2677996

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Liu, H., Chou, C., Huang, L., Guo, W., Yu, P., Huang, C., & Cheng, C. (2023). Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation. In N. Engheta, M. A. Noginov, N. I. Zheludev, & N. I. Zheludev (Eds.), Metamaterials, Metadevices, and Metasystems 2023 Article 1264608 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12646). SPIE. https://doi.org/10.1117/12.2677996

@inproceedings{a836df10d8d842788c9949d3c4a2eb54,

title = "Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation",

abstract = "This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins{\textquoteright}s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.",

keywords = "Critical dimension (CD), DUV photolithography, Fully convolutional network (FCN), Gerchberg-Saxton algorithm, Optical phase conjugation, Optical proximity correction (OPC), Wavefront shaping, lithographic model",

author = "Hsuehli Liu and Chunyen Chou and Linchia Huang and Wilson Guo and Peichen Yu and Chunghsuan Huang and Chaujern Cheng",

note = "Publisher Copyright: {\textcopyright} 2023 SPIE.; Metamaterials, Metadevices, and Metasystems 2023 ; Conference date: 20-08-2023 Through 23-08-2023",

year = "2023",

doi = "10.1117/12.2677996",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Nader Engheta and Noginov, {Mikhail A.} and Zheludev, {Nikolay I.} and Zheludev, {Nikolay I.}",

booktitle = "Metamaterials, Metadevices, and Metasystems 2023",

address = "United States",

}

Liu, H, Chou, C, Huang, L, Guo, W, Yu, P, Huang, C & Cheng, C 2023, Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation. in N Engheta, MA Noginov, NI Zheludev & NI Zheludev (eds), Metamaterials, Metadevices, and Metasystems 2023., 1264608, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12646, SPIE, Metamaterials, Metadevices, and Metasystems 2023, San Diego, United States, 20/08/23. https://doi.org/10.1117/12.2677996

Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation. / Liu, Hsuehli; Chou, Chunyen; Huang, Linchia et al.
Metamaterials, Metadevices, and Metasystems 2023. ed. / Nader Engheta; Mikhail A. Noginov; Nikolay I. Zheludev; Nikolay I. Zheludev. SPIE, 2023. 1264608 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12646).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation

AU - Liu, Hsuehli

AU - Chou, Chunyen

AU - Huang, Linchia

AU - Guo, Wilson

AU - Yu, Peichen

AU - Huang, Chunghsuan

AU - Cheng, Chaujern

PY - 2023

Y1 - 2023

N2 - This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.

AB - This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg-Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ∆CD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.

KW - Critical dimension (CD)

KW - DUV photolithography

KW - Fully convolutional network (FCN)

KW - Gerchberg-Saxton algorithm

KW - Optical phase conjugation

KW - Optical proximity correction (OPC)

KW - Wavefront shaping

KW - lithographic model

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U2 - 10.1117/12.2677996

DO - 10.1117/12.2677996

M3 - Conference contribution

AN - SCOPUS:85176000983

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Metamaterials, Metadevices, and Metasystems 2023

A2 - Engheta, Nader

A2 - Noginov, Mikhail A.

A2 - Zheludev, Nikolay I.

PB - SPIE

T2 - Metamaterials, Metadevices, and Metasystems 2023

Y2 - 20 August 2023 through 23 August 2023

ER -

Metadiffuser fabricated by DUV KrF 248nm photolithography for wavefront manipulation

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Keywords

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