Mercury Ion Sensing Using Aptamer-Modified Extended Gate Field-Effect Transistors and a Handheld Device

Chun Ta Lee, Akhil K. Paulose, Tzuhan Kuo, Guan Cheng Zeng, Chia Kai Lin, Yu Ying Cheng, Zong Hong Lin, Jung Chih Chen, Guo Chun Dong, Bor Ran Li, Sheng Chun Hung, Yu Lin Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this research, we have designed, fabricated, and characterized an Electrical double-layer (EDL) gated FET platform to detect heavy metals. The electrical double layer (EDL)-gated field-effect transistor-based sensor is garnering interest due to its sensitivity, portable configuration, selectivity, inexpensive operation, as well as their user-friendly nature. the sensing platform designed for rapid detection of Hg2+ using DNA-based aptamers. The investigation was carried out by introducing different concentrations of Mercury ions and a lower detection limit of 1 μM was achieved. The sensor surface was validated with Kelvin Probe Force Microscope (KPFM), which is consistent with the electrical response obtained. Sensor selectivity was studied and exhibited a high sensitivity toward Mercury ion detection. Considering its limit of detection, compatibility, and fast turnaround; the proposed system has the potential to be used to detect Mercury ions instantly for environmental monitoring, where quick and accurate detection of Mercury ions is essential.

Original languageEnglish
Article number077005
JournalECS Journal of Solid State Science and Technology
Volume12
Issue number7
DOIs
StatePublished - Jul 2023

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